Силовой модуль IGBT BSM75GB120DN2HOSA1
5336,00 ₽
Описание
Техническая спецификация
| Manufacturer | Infineon Technologies |
| Series | — |
| Part Status | Active |
| IGBT Type | — |
| Configuration | Half Bridge |
| Voltage — Collector Emitter Breakdown (Max) | 1200V |
| Current — Collector (Ic) (Max) | 105A |
| Power — Max | 625W |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 75A |
| Current — Collector Cutoff (Max) | 1.5mA |
| Input Capacitance (Cies) @ Vce | 5.5nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
Описание
IGBT 2 MED POWER 34MM-1 — IGBT Module Half Bridge 1200V 105A 625W Chassis Mount Module
IGBT модули BSM75GB120DN2HOSA1
